stake官网入口

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete ；
2、The voltage level is 650V, the current level is 50A@Tc=100℃ ；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications ；
4、Low conduction loss, low switching loss, high reliability ；
5、Use environmentally friendly materials and meet RoHS standards ；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient  ；
3、High voltage 650V ；
4、Low conduction loss, low switching loss, meet the high frequency application conditions ；
5、The latest generation of micro trench design, a cost-effective product ；
SPECIFICATION

DGW50N65CTL0

Related new products

New N150V SGT MOSFETs

Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter

P60V MOSFET for Automotive Electronics

TOLT-Packaged Power MOSFET for Clean Energy

SOD-323FL Small Package Rectifier Diode

High junction temperature ultrafast recovery diode

New SiC MOSFET for Photovoltaic Energy Storage, OBC&Power Supply

120V SGT process N-channel MOSFET

ESD Products for Panel Ports

50uA SOD-523 Package Small Signal Zener Diode
网站地图